This is a 1200ºC tube furnace integrated with an ultrasonic mist system for epitaxial thin film or single crystal growth via the mist CVD method.
This is a 1200ºC tube furnace integrated with an ultrasonic mist system for epitaxial thin film or single crystal growth via the mist CVD method.
The Mist CVD system mainly consists of a single temperature zone tube furnace, atomization device, vacuum unit, and gas supply system. This device can atomize and transport materials dissolved in liquid to the furnace chamber through an ultrasonic atomization device. The gas supply system creates an internal atmosphere environment in the chamber, and by directly depositing the solvent on the heated substrate, the surface pyrolysis reaction forms a product film. It can be used to prepare carbon nanotubes and oxide epitaxial films.
SPECIFICATIONS:
Furnace | The splittable tube furnace with 1200oC Max. working temperature 400 mm length heating zone with 125 mm length constant temperature zone. 30 segments programmable temperature controller with +/- 1ºC accuracy Power: 3KW, 220VAC ( +/- 10% ）， single phase， 50/60Hz Note: working temperature can be upgraded to 1500oC by this furnace |
Quartz Tube & Sample Holder | A quartz processing tube with flanges and the size of OD 60 mm x ID 54 mm x L 1000 mm is included One quartz sample holder is included, which can hold 4 pcs of 10x10x0.5 mm substrate at 45 degrees. |
Ultrasonic Generator | 1.7 Mhz ultrasonic generator is located in an airtight SS316 tank. 4 levels of ultrasonic power are for adjusting the mist amount Mist time is 30 - 180 minutes adjustable A liquid syringe pump is equipped to inject automatically which comes with a 60 ml plastic syringe. The speed range for the liquid injection pump is 0.004 ml/min - 70 ml/min The mist generator is connected to a tube furnace via a 1/4" stainless steel tube |
MFC Gas Delivery System | 4 channels MFC gas mixing and delivering station is included 2 channel gases are filled into stainless steel tank as carrying gas after mixing another 2 channels of gases are filled into a tube furnace as diluting gas after mixing MFC flow rate: 0 - 500 ml/ minute adjustable MFC flow accuracy: ±0.2%F.S Working pressure range: 0.1～0.5 MPa |
Vacuum Pump ( optional ) | KF 25 vacuum port is installed on the flange of the processing tube with a valve to connect to a vacuum pump A dry pump is strongly recommended for the longer service life of Mist CVD. |
Control Panel | Touch screen control panel to set operation parameters, including Temperature program and curve 4 channels gas flow rate Mist-generating level and time RS 485 port and PC operation software is available upon request |
Warranty | One-year limited warranty with lifetime support (Consumable parts such as processing tubes and o-rings are not covered by the warranty.) |
Application | This kind of mist CVD can be used to grow Ga2O3 crystal with high quality |
This is a 1200ºC tube furnace integrated with an ultrasonic mist system for epitaxial thin film or single crystal growth via the mist CVD method.
The Mist CVD system mainly consists of a single temperature zone tube furnace, atomization device, vacuum unit, and gas supply system. This device can atomize and transport materials dissolved in liquid to the furnace chamber through an ultrasonic atomization device. The gas supply system creates an internal atmosphere environment in the chamber, and by directly depositing the solvent on the heated substrate, the surface pyrolysis reaction forms a product film. It can be used to prepare carbon nanotubes and oxide epitaxial films.
SPECIFICATIONS:
Furnace | The splittable tube furnace with 1200oC Max. working temperature 400 mm length heating zone with 125 mm length constant temperature zone. 30 segments programmable temperature controller with +/- 1ºC accuracy Power: 3KW, 220VAC ( +/- 10% ）， single phase， 50/60Hz Note: working temperature can be upgraded to 1500oC by this furnace |
Quartz Tube & Sample Holder | A quartz processing tube with flanges and the size of OD 60 mm x ID 54 mm x L 1000 mm is included One quartz sample holder is included, which can hold 4 pcs of 10x10x0.5 mm substrate at 45 degrees. |
Ultrasonic Generator | 1.7 Mhz ultrasonic generator is located in an airtight SS316 tank. 4 levels of ultrasonic power are for adjusting the mist amount Mist time is 30 - 180 minutes adjustable A liquid syringe pump is equipped to inject automatically which comes with a 60 ml plastic syringe. The speed range for the liquid injection pump is 0.004 ml/min - 70 ml/min The mist generator is connected to a tube furnace via a 1/4" stainless steel tube |
MFC Gas Delivery System | 4 channels MFC gas mixing and delivering station is included 2 channel gases are filled into stainless steel tank as carrying gas after mixing another 2 channels of gases are filled into a tube furnace as diluting gas after mixing MFC flow rate: 0 - 500 ml/ minute adjustable MFC flow accuracy: ±0.2%F.S Working pressure range: 0.1～0.5 MPa |
Vacuum Pump ( optional ) | KF 25 vacuum port is installed on the flange of the processing tube with a valve to connect to a vacuum pump A dry pump is strongly recommended for the longer service life of Mist CVD. |
Control Panel | Touch screen control panel to set operation parameters, including Temperature program and curve 4 channels gas flow rate Mist-generating level and time RS 485 port and PC operation software is available upon request |
Warranty | One-year limited warranty with lifetime support (Consumable parts such as processing tubes and o-rings are not covered by the warranty.) |
Application | This kind of mist CVD can be used to grow Ga2O3 crystal with high quality |
